BYV32G-200 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 01 — 11 January 2011 3 of 11
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage - 200 V
VRWM
crest working reverse voltage - 200 V
VR
reverse voltage DC - 200 V
IO(AV)
average output current square-wave pulse; δ
= 0.5 ; Tmb
≤
115 °C;
both diodes conducting; see Figure 1;
see Figure 2
-20A
IFRM
repetitive peak forward current
δ
= 0.5 ; tp
= 25 μs; Tmb
≤
115 °C; per diode - 20 A
IFSM
non-repetitive peak forward
current
tp
= 8.3 ms; sine-wave pulse; Tj(init)
=25°C;
per diode
- 137 A
tp
= 10 ms; sine-wave pulse; Tj(init)
=25°C;
per diode
- 125 A
IRRM
repetitive peak reverse current
δ
= 0.001 ; tp
=2μs - 0.2 A
IRSM
non-repetitive peak reverse
current
tp
= 100 μs - 0.2 A
Tstg
storage temperature -40 150 °C
Tj
junction temperature - 150 °C
VESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 k?; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0124
8
0155
10
IF(AV)
(A)
IF(AV)
(A)
003aac978
4
8
12
0
1.9
a = 1.57
2.2
2.8
4.0
Ptot
(W)
003aac979
5
10
15
0
0.5
0.2
0.1
Ptot
(W)
δ
= 1
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